Search Results for cryogenic FIB-SEM

FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM techniques provide a solution. It describes the basic setup of a FIB-SEM system and provides examples of its use on InN nanocrystals, GaN films, and copper-containing multilayer photovoltaic materials.

The sixth FIB-SEM workshop was held March 1, 2013, in Cambridge, Mass. This article provides a summary of the event along with highlights from the 18 paper presentations.

This is the story of how the mainstream Omniprobe FIB lift-out solution was invented and delivered to the market.

This column assesses the current state and outlook for superconducting device technology and its application in exascale computing.

This article discusses the current state of large area integrated circuit deprocessing, the latest achievements in the development of automated deprocessing equipment, and the potential impact of advancements in gas-assisted etching, ion source alternatives, compact spectroscopy, and high-speed lasers.

This article provides a summary of each of the four User’s Group meetings that took place at ISTFA 2011. The summaries cover key participants, presentation topics, and discussion highlights from each of the following groups: Group 1, Focused Ion Beam; Group 2, 3D Packaging and Failure Analysis; Group 3, Finding the Invisible Defect; and Group 4, Nanoprobing and Electrical Characterization.

The 38th International Symposium for Testing and Failure Analysis (ISTFA 2012) was held in Phoenix, Ariz., November 11-15, 2012. This article provides a summary of the keynote presentation, technical program, panel discussion, tutorials, User’s Group meetings, and equipment exposition.

New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.

This article provides a recap of the 50th International Symposium for Testing and Failure Analysis (ISTFA), which was held in San Diego from October 28 to November 1, 2024. It includes General Chair Yan Li’s wrap-up, a list of the winning ISTFA papers and posters, and highlights from panel sessions and user group meetings.

This article provides a high-level review of the tools and techniques used for backside analysis. It discusses the use of laser scanning and conventional microscopy, liquid and solid immersion lenses, photon emission microscopy (PEM), and laser-based fault isolation methods with emphasis on light-induced voltage alteration (LIVA). It explains how laser voltage probing is used for backside waveform acquisition and describes backside sample preparation and deprocessing techniques including parallel polishing and milling, laser chemical etching, and FIB circuit edit and modification.

This article discusses the emergence of nanoelectronics and the effect it may have on semiconductor testing and failure analysis. It describes the different types of quantum effect and molecular electronic devices that have been produced, explaining how they are made, how they work, and the changes that may be required to manufacture and test these devices at scale.