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critical timing paths

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Journal Articles
EDFA Technical Articles (2005) 7 (2): 20–28.
Published: 01 May 2005
...Jaume Segura; Chuck Hawkins Dealing with timing failures in nanometer-scale ICs requires a deeper understanding of critical timing paths, noise mechanisms, process variability, timing rules, and the statistical interaction of random parameter values and distributions. This article examines...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 6–11.
Published: 01 May 2004
... and how FIB tunable circuits were used to overcome difficulties, resolve problems, and realize a fully functional chip that met all system specifications on the first pass of the design. Copyright © ASM International® 2004 2004 ASM International critical timing paths design margins FIB tunable...
Journal Articles
EDFA Technical Articles (2015) 17 (2): 10–17.
Published: 01 May 2015
... and the transistor in the critical path. With a 50 ps laser pulse, however, the well capacitance, Cwell, becomes important. The decrease in VbLocal lags the photocurrent injection due to the RC delay of the well. A laser pulse timed to occur just before the critical event arrives at the transistor will cause...
Journal Articles
EDFA Technical Articles (2014) 16 (4): 26–34.
Published: 01 November 2014
... The process for imaging currents from magnetic fields first appeared in 1989.[6] With the development of the scanning SQUID microscope in the 1990s it was possible to see, for the first time, buried current paths on the surface of multilayered microelectronic devices through multiple conductive...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 6–25.
Published: 01 November 1999
... has a history of devising clever solutions. For example, consider the power supply and threshold voltage tradeoffs above. One strategy uses a more complex process that allows two different threshold voltages. Transistors with lower thresholds are used for high speed in the critical timing paths...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 4–9.
Published: 01 February 2001
... used in compound semiconductor applications12. Yield and Reliability As a grand challenge, yield and reliability provide the most direct path to impact for the manufacturing sector of the industry. The drivers ELECTRONIC DEVICE FAILURE ANALYSIS NEWS 5 Roadmaps, continued Fig. 4. Time-of- ight SIMS (ToF...
Journal Articles
EDFA Technical Articles (2002) 4 (3): 5–9.
Published: 01 August 2002
... are characterized based on location, their significance in terms of logic gates and transistors, and critical resistance for dc logic and timing failures. Open defects are more complex and diverse with six possible failure modes each of which are described in the article. Copyright © ASM International® 2002 2002...
Journal Articles
EDFA Technical Articles (2006) 8 (1): 30–31.
Published: 01 February 2006
... and image critical size defects as technology shrinks. The introduction of new materials along with their new failure Higher resolution, sensitivity, mechanisms makes time resolution, throughput, as matters worse. High- well as three-dimensional er resolution, sensi- localization are key issues to tivity...
Journal Articles
EDFA Technical Articles (2011) 13 (4): 4–12.
Published: 01 November 2011
... die at a time. If one of the dice in the stack has a broken bypass scan path, an alternate scan pathway may be selected. P1687, which is the proposed IEEE standard for access of on-chip embedded instruments,[22,23] is one method that can be used to implement a P1838 access mechanism. Before describing...
Journal Articles
EDFA Technical Articles (2004) 6 (3): 13–18.
Published: 01 August 2004
... Propagation delay times on an IC interconnect path at (a) VDD = 2.5 V, and (b) VDD = 1.25 V. meters vary from die (Source: Ref 8) to die, so that these curves have a third component of variability. The nal physical response to critical dimension variability. conclusion is that any given IC returned...
Journal Articles
EDFA Technical Articles (2017) 19 (1): 10–13.
Published: 01 February 2017
... is not even mentioned in descriptions of bipolar devices. In fact, oxide and alternate insulators are critical to semiconductors. Identifying, avoiding, or eliminating inherent problems was, and still is, a major focus for process development. At the time of the first lunar landing, mobile charges in oxide...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 28–30.
Published: 01 May 2004
... operating speed and pin count. The challenges in physical analysis are driven primarily by smaller device feature sizes and by the host of new materials being introduced. In addition to the technical challenges, infrastructure changes are also likely to occur. The industry paths for addressing...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 46–48.
Published: 01 August 2011
... and combined them into a theory paper[3] that boosted our understanding of how to optimize the LADA test and setup. In the debug case that bit us, the video processor was performing an entire JPEG image conversion as a test. As a result, the critical path was being exercised many times during each test...
Journal Articles
EDFA Technical Articles (2014) 16 (2): 18–23.
Published: 01 May 2014
..., which can reveal defects such as mold-epoxy cracking, discoloration, thermal/mechanical damage, rework, and so on. Ensuring that the external defect is the cause of the failure and not the result of the failure is critical, because it can lead to a wrong root cause. A real-time x-ray inspection allows...
Journal Articles
EDFA Technical Articles (2004) 6 (1): 6–11.
Published: 01 February 2004
... time and eventually form a conductive path through a percolation process. Several physical models have been developed to describe the time, voltage, and temperature dependence of intrinsic oxide wear-out. Although the exact mechanism of wear-out is still a subject of debate, it is generally accepted...
Journal Articles
EDFA Technical Articles (2022) 24 (4): 12–21.
Published: 01 November 2022
... and overproduce ICs and place them in the supply chain. This article describes the memometer, a hardware metering technique, which addresses the supply chain integrity of field-programmable gate arrays (FPGAs). Currently, FPGAs pervade most of the semiconductor ecosystem due to their faster prototyping and time...
Journal Articles
EDFA Technical Articles (2006) 8 (1): 6–14.
Published: 01 February 2006
... with a high level. The timing of this write operation is critical and is displayed in Fig. 1. The graph shows the voltage levels on the true and complement bitlines and the voltage levels of a good cell and a cell with a faulty resistor. All voltage levels Fig. 1 Diagram of write timing. Voltages for true...
Journal Articles
EDFA Technical Articles (2022) 24 (2): 4–10.
Published: 01 May 2022
... in the optical path, two major contributors for color performance are the color filter (CF) layer inside of the liquid crystal cell and the WLEDs. To achieve a wider color gamut, WLEDs with separate green and red phosphor materials are used instead of conventional single yellow YAG phosphor.[2] As fluorescent...
Journal Articles
EDFA Technical Articles (2005) 7 (2): 14–19.
Published: 01 May 2005
... their effect on read and write operations, and the complexities involved in assessing potential problems. Copyright © ASM International® 2005 2005 ASM International critical resistance DRAM cells lateral gate effect single-cell failures threshold voltage weak open contacts httpsdoi.org...
Journal Articles
EDFA Technical Articles (2013) 15 (2): 4–13.
Published: 01 May 2013
... circuitry Duty cycle Circuitry design causing overdimensioning critical load cuitry, application, or environmental ESD, in situ ESD, Insufficient cooling RF electromagnetic conditions, which drive the device thunderstorm lightning interference operating conditions at least part-time Transient signal cross...