1-20 of 51 Search Results for

contact-level edits

Follow your search
Access your saved searches in your account

Would you like to receive an alert when new items match your search?
Close Modal
Sort by
Journal Articles
EDFA Technical Articles (2010) 12 (1): 6–12.
Published: 01 February 2010
...David W. Niles; Ronald W. Kee Designing circuit edits at the contact level offers tremendous advantages in reliability and yield success over similar edits designed in the metal stack. To that end, a full-thickness backside circuit edit strategy has been developed that eliminates part thinning...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
... dielectrics, combined with the downward scaling of dimensions have required the continuous development of circuit edit processes to track this interconnect scaling trend both laterally and vertically. The advent of low-k has enabled the stack height to decrease relative to the number of metal levels, so...
Journal Articles
EDFA Technical Articles (2023) 25 (2): 9–13.
Published: 01 May 2023
... straightforward. Fig. 1 The circuit edit system enables direct access to each layer. From left to right: N-well, FinFET/Poly, metal, and contact/via. edfas.org 10 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 25 NO. 2 If one is new to both, start with FIB because it s the key to pinpointing, imaging...
Journal Articles
EDFA Technical Articles (2011) 13 (2): 12–18.
Published: 01 May 2011
...) and (b) a line cut with an oxidizing chemistry become less of an issue at lower metallizations.) Addressing these copper issues results in increased edit times. Although the lower metallizations have become thinner, the higher-level metallizations have grown thicker, further exacerbating edit times. Fig...
Journal Articles
EDFA Technical Articles (2019) 21 (4): 22–28.
Published: 01 November 2019
... Technologies SA, Switzerland Jörg Jatzkowski, Fraunhofer IMWS, Germany courbat@imina.ch INTRODUCTION In the field of semiconductor failure analysis (FA), choosing the best investigation technique for the particular application depends on the allocated time per analysis and the level of accuracy that must...
Journal Articles
EDFA Technical Articles (2013) 15 (1): 37–40.
Published: 01 February 2013
... modifications. He introduced the concept of package FIB edits and showed the similarities to traditional silicon FIB edits. The work showed examples of both cuts and jumpers of signal lines in traditional packages, completed package edits on wafer-level packages, and also introduced SystemNav software (Synopsys...
Journal Articles
EDFA Technical Articles (2015) 17 (4): 14–20.
Published: 01 November 2015
... this imbalance by rewiring some polysilicon resistors in the circuit, and, naturally, verification was desired before ordering a respin. The circuit edit required a cut and join at the metal 2 level on an eight-metal copper metallization process, with insufficient room to place both cut and join. The focused ion...
Journal Articles
EDFA Technical Articles (2018) 20 (1): 36–S-6.
Published: 01 February 2018
..., I believe ISTFA 2017 met or exceeded the expectations of most attendees. Of course, there are also things that can be improved. The ISTFA 2018 Organizing Committee has received your conference survey feedback and is reviewing it carefully. If you have additional comments, please feel free to contact...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 30–35.
Published: 01 February 2016
... Fig. 6 PFIB-sectioned solder joint compared to metallographic cross section edfas.org 35 ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 1 (a) (b) Fig. 7 (a) 22-nm-node sample deprocessed to contact level with PFIB with probe touchdown. (b) Transistor characteristics of a 22-nm-node device failure...
Journal Articles
EDFA Technical Articles (2015) 17 (1): 53–55.
Published: 01 February 2015
... resides in the various companies incorporating that technology into their workflow, and thus, it requires judgment, which is not part of this column. However, through contact with several authors of Best Papers, an effort has been made to identify cases in which the technology has obtained some level...
Journal Articles
EDFA Technical Articles (2010) 12 (2): 20–28.
Published: 01 May 2010
... characterization. The smaller geometries are harder to land on and stay on at contact level. To that end, Richard presented how pulsing can quickly obtain transistor data and identify a failing transistor by pulse probing at metal 1. He described how pulsing the SRAM bitcell while slowly decreasing the Vdd voltage...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 1–18.
Published: 01 February 2001
... dominant. Resistance increases are linked to the decreased cross sectional area of the metallization in the deep submicron region. Capacitance increases are primarily associated with the decreased spacing between adjacent metallization stripes on the same level of metallization. With the exception...
Journal Articles
EDFA Technical Articles (2019) 21 (3): 16–24.
Published: 01 August 2019
... or using finite state machines. All techniques require a certain input sequence to unlock the circuit functionality. Circuit-level obfuscation includes cell camouflage, dummy contacts, and insertion of filler cells to protect the chip layout from reverse engineering attacks. Tamper-proof fitting enclosures...
Journal Articles
EDFA Technical Articles (2015) 17 (1): 33–37.
Published: 01 February 2015
.... Stoker discussed added functionality to near-infrared microscopes, using pumpprobe technology. The high-level approach is to pump charge into a device under test, monitor its local flow, and potentially detect interconnect issues between cells. Another method is to build activity maps (collect as many...
Journal Articles
EDFA Technical Articles (2004) 6 (2): 28–30.
Published: 01 May 2004
.... The problem applies not only to deprocessing and cross-section work at the die level but also to transmission electron microscopy sample preparation and package analysis activities. FIB for New Technologies The ability to perform FIB edits of circuits to support prototypes and reduce the number of design...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 35–35C.
Published: 01 February 2001
... contacts after HTOL test. In the FC FIB, the failing pads were located using the CAD navigation tool. A 600 µm x 600 µm trench was milled over the failing bump area. The bulk silicon was milled using XeF2 GAE process. The metal layers were removed using chlorine. When a higher level metal layer was reached...
Journal Articles
EDFA Technical Articles (2013) 15 (4): 52–54.
Published: 01 November 2013
... The semiconductor industry continues to scale microelectronics in accordance with Moore s Law, as the minimum feature size on integrated circuits has decreased from 800 nm in 1993 to 90 nm in 2003 to features on integrated circuits with line widths of 20 nm, pitches of 40 nm, resistivities of 80 cm, contact...
Journal Articles
EDFA Technical Articles (2021) 23 (2): 33–37.
Published: 01 May 2021
... through the backside chip edit process, and the particular challenges that the 7 nm process presents for prototyping design modifications. While tungsten contacts could be selectively etched with XeF2, no such solutions currently exist for cobalt interconnects, not to mention line width/ density...
Journal Articles
EDFA Technical Articles (2007) 9 (4): 6–13.
Published: 01 November 2007
... continuity, not a low via resistivity, which is required for circuit edit or mechanical probing.) Initially, vendors offered FIB tools for extending the probe point to the surface and sold numerous tools for this purpose.[21,22] As each level of metallization was added, the time to extend a lower-level...
Journal Articles
EDFA Technical Articles (1999) 1 (3): 6–17.
Published: 01 August 1999
... contact/ Fig. 11: Simple schematic of an LCE silicon milling system. e-beam probing and circuit editing to be per- formed from the silicon backside on C4 packaged ICs. A The first step, mechanical thinning, is well established and detailed review is found in a paper by R. H. Livengood, P...