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aluminum electromigration

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Journal Articles
EDFA Technical Articles (2014) 16 (3): 14–19.
Published: 01 August 2014
... of a particular failure. It also discusses the differences between aluminum and copper electromigration. Copyright © ASM International® 2014 2014 ASM International aluminum electromigration copper electromigration electromigration metal transfer httpsdoi.org/10.31399/asm.edfa.2014-3.p014 EDFAAO...
Journal Articles
EDFA Technical Articles (2016) 18 (2): 12–14.
Published: 01 May 2016
... in integrated circuits (ICs). Without a firm concept of mechanical stress in ICs and IC packaging, many failure mechanisms may not be recognized or appreciated until later maybe too much later. New metallization systems have largely replaced the aluminum and aluminum/silicon conductors that were commonplace...
Journal Articles
EDFA Technical Articles (2002) 4 (4): 11–16.
Published: 01 November 2002
... received special attention due to their widespread occurrence. Via Voiding and Particulates An early report of a resistive contact and its temperature effects was given by Campbell, et al.6 Significantly, the initial temperature-dependent resistive contact failure later electromigrated to a full open...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 22–28.
Published: 01 February 2016
... largerdiameter wire are produced by wedge bonding aluminum or copper, using either round wire or ribbon (a flattened form of round wire). During the past 5 years there has been a major transition in our industry from ball bonding with gold wire to the use of copper, palladium-coated copper, or silver wire...
Journal Articles
EDFA Technical Articles (1999) 1 (4): 21–23.
Published: 01 November 1999
...William F. Filter Stress voiding is an insidious IC failure mechanism that can be difficult to identify and arrest. It is of particular concern to those who produce and test ICs with aluminum-alloy interconnects or who assess the reliability of legacy devices with long service life. This article...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
... that the physical dimensions of a nine-metal interconnect stack at 65 nm are less than a four-metal stack at 250 nm. The Joys of Editing Aluminum Historically in the interconnect stack, aluminum has been partnered with SiO2. Early on,[1,2] it was found that XeF2 accelerated the removal of the SiO2, and, because...
Journal Articles
EDFA Technical Articles (2006) 8 (3): 12–17.
Published: 01 August 2006
... of transistors.[11] In the damascene-copper process, vias and metal are patterned and etched prior to the additive metallization. Because of this, micromasking during the next lithography step can occur.[12] The open-defect density in copper shows a higher value than that found in aluminum.[12] Rodriguez...
Journal Articles
EDFA Technical Articles (2013) 15 (2): 4–13.
Published: 01 May 2013
... and slow EOS Fast growing Slow growing Fast or slow growing failure mechanism histories, as shown Latch-up Aluminum reconstruction Molten resistors in Table 2. The result of such consideration will Chaotic Vdd-Vss short paths Electromigration Burned devices lead to the second step: an analysis Damaged ESD...
Journal Articles
EDFA Technical Articles (2014) 16 (1): 4–16.
Published: 01 February 2014
... sections for diatomic gases. He received a Ph.D. in solid-state science from Syracuse University in 1991, with the subject of his research being the effects of hydrogen storage on the electromigration properties of aluminum/palladium/aluminum thin films. His industrial career was centered on characterizing...
Journal Articles
EDFA Technical Articles (2018) 20 (1): 20–31.
Published: 01 February 2018
... use tens of thousands of connections per die. Micro-copper pillar geometries have been widely adopted because their small size and fine pitch provide high thermal conductivity, higher input/output (I/O) density, and resistance to deleterious electromigration effects. In micro-copper pillars, SnAg...