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STEM-EBIC imaging
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Journal Articles
EDFA Technical Articles (2002) 4 (4): 29–33.
Published: 01 November 2002
...Kristin Lee Bunker; Terry J. Stark; Dale Batchelor; Juan Carlos Gonzalez; Phillip E. Russell STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrier diffusion length, surface recombination velocity, and inhomogeneities in Si...
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STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrier diffusion length, surface recombination velocity, and inhomogeneities in Si pn junctions. In this article, the authors explain how they developed and built a STEM-EBIC system, which they then used to determine the junction location of an InGaN quantum well LED. They also developed a novel FIB-based sample preparation method and a custom sample holder, facilitating the simultaneous collection of Z-contrast, EBIC, and energy dispersive spectroscopy images. The relative position of the pn junction with respect to the quantum well was found to be 19 ± 3 nm from the center of well.
Journal Articles
EDFA Technical Articles (2023) 25 (1): 4–8.
Published: 01 February 2023
... in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues. Copyright © ASM International® 2023 2023 ASM International focused ion beam milling in-situ TEM biasing sample preparation STEM EBIC imaging 4 httpsdoi.org/10.31399/asm.edfa...
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This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.
Journal Articles
EDFA Technical Articles (2020) 22 (4): 4–8.
Published: 01 November 2020
... of failure. In this article, the author presents results indicating that STEM EBIC, with the new SEEBIC mode, can provide electronic contrast that complements the physical-based contrast of STEM imaging. By identifying device features at higher risk of failure, the two methods may open a path to predictive...
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The ability to discern the composition and placement of atoms in a sample makes TEM one of the most powerful characterization tools for microelectronic components. For many devices, however, the dynamics underlying normal operation do not displace atoms. Device function is, instead, mediated by electronic and thermal processes that have little effect on physical structure, necessitating additional tools to determine the causes of failure. In this article, the author presents results indicating that STEM EBIC, with the new SEEBIC mode, can provide electronic contrast that complements the physical-based contrast of STEM imaging. By identifying device features at higher risk of failure, the two methods may open a path to predictive failure analysis.
Journal Articles
EDFA Technical Articles (2018) 20 (3): 24–33.
Published: 01 August 2018
... of this article show how such challenges can be overcome using EBIC/EBAC, current imaging, and nanoprobing. The cases involve a wide range of issues, including resistor chain defects, substrate leakage, microcracking, micro contamination, and open failures due to copper plating problems and missing vias...
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Advances in IC technology have made failure site localization extremely challenging. Through a series of case studies, the authors of this article show how such challenges can be overcome using EBIC/EBAC, current imaging, and nanoprobing. The cases involve a wide range of issues, including resistor chain defects, substrate leakage, microcracking, micro contamination, and open failures due to copper plating problems and missing vias.
Journal Articles
EDFA Technical Articles (2020) 22 (1): 30–41.
Published: 01 February 2020
... of primary applications and tool configurations. easy access to one of these tools. As the majority of the attendees were sectioning/imaging/ STEM-TEM users, the session began there. Lukas Hladik from Tescan presented on the art of large area planar delayer by xenon plasma FIB, and the Richard Young from...
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The 45th International Symposium for Testing and Failure Analysis (ISTFA 2019) was held in Portland, Oregon, November 10-14, 2019. This article gives a brief summary of the highlights and identifies key contributors to the event. It also includes highlights of panel discussions from the inaugural meeting of Women in Electronics Failure Analysis (WEFA) and the panel discussion "What Does Artificial Intelligence Mean to Failure Analysis Engineers?" The article concludes with a brief recap of each of the four User Group meetings that took place during the conference: Sample Prep, System on Package, FIB/Circuit Edit, and Nanoprobing.
Journal Articles
EDFA Technical Articles (2021) 23 (2): 33–37.
Published: 01 May 2021
... from GlobalFoundries, presented, The Other Side of the Spectrum: How We Identify Fails in Large Packages through Nano-probing and EBIC/EBAC. New advanced packaging architectures are creating challenging requirements for nanoprobing probe areas. The large packages now require up to a 70 mm area...
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This article provides a recap and summaries of the EDFAS Virtual User Group Workshop held in January 2021. The summaries cover key participants, presentation topics, and discussion highlights from the Focused Ion Beam, Sample Preparation, Contactless Probing and Nanoprobing, and System on Package virtual group meetings.