Skip Nav Destination
Close Modal
Search Results for
InGaN LED
Update search
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
Filter
- Title
- Authors
- Author Affiliations
- Full Text
- Abstract
- Keywords
- DOI
- ISBN
- EISBN
- Issue
- ISSN
- EISSN
- Volume
- References
NARROW
Format
Topics
Journal
Article Type
Date
Availability
1-3 of 3 Search Results for
InGaN LED
Follow your search
Access your saved searches in your account
Would you like to receive an alert when new items match your search?
Sort by
Journal Articles
EDFA Technical Articles (2002) 4 (4): 29–33.
Published: 01 November 2002
... pn junctions. In this article, the authors explain how they developed and built a STEM-EBIC system, which they then used to determine the junction location of an InGaN quantum well LED. They also developed a novel FIB-based sample preparation method and a custom sample holder, facilitating...
Abstract
View article
PDF
STEM-EBIC imaging, a nano-characterization technique, has been used in the study of electrically active defects, minority carrier diffusion length, surface recombination velocity, and inhomogeneities in Si pn junctions. In this article, the authors explain how they developed and built a STEM-EBIC system, which they then used to determine the junction location of an InGaN quantum well LED. They also developed a novel FIB-based sample preparation method and a custom sample holder, facilitating the simultaneous collection of Z-contrast, EBIC, and energy dispersive spectroscopy images. The relative position of the pn junction with respect to the quantum well was found to be 19 ± 3 nm from the center of well.
Journal Articles
EDFA Technical Articles (2020) 22 (4): 28–33.
Published: 01 November 2020
... measured.[14-15] Micro-LED. With micron-sized LEDs anticipated as the next gen- eration of display technology, the Fig. 3 Examples of the two main acquisition modes in cathodoluminescence spectroscopy. The panchromatic mode, top, uses a point detector to acquire the signal intensity over a certain span...
Abstract
View article
PDF
This article discusses the basic principles of SEM-based cathodoluminescence (CL) spectroscopy and demonstrates its usefulness in process development, statistical process control, and failure analysis. The technologies where the benefits of CL spectroscopy are most evident are compound semiconductor optoelectronics and high electron mobility transistors as reflected in the application examples.
Journal Articles
EDFA Technical Articles (2013) 15 (4): 14–21.
Published: 01 November 2013
...Martine Simard-Normandin This article describes the physical characteristics, operating principles, and key failure modes of light-emitting diodes (LEDs), focusing on phosphor-converted blue LEDs because of their relative importance. The explanations throughout the article are supported by graphics...
Abstract
View article
PDF
This article describes the physical characteristics, operating principles, and key failure modes of light-emitting diodes (LEDs), focusing on phosphor-converted blue LEDs because of their relative importance. The explanations throughout the article are supported by graphics that reveal microscale features of interest as well as defects.