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FIB milling

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Journal Articles
EDFA Technical Articles (2019) 21 (4): 4–12.
Published: 01 November 2019
..., however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 18–26.
Published: 01 August 2011
... holography, tomography, high-angle annular dark-field scanning, and electron energy-loss spectroscopy. In most cases, achieving optimal quality requires the use of alternate FIB milling angles, as in plan-view, sideways, and backside milling, all of which are discussed. This article discusses...
Journal Articles
EDFA Technical Articles (2013) 15 (3): 12–19.
Published: 01 August 2013
...Nicholas Antoniou FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM...
Journal Articles
EDFA Technical Articles (2011) 13 (3): 28–33.
Published: 01 August 2011
...Jason Higgins; Re-Long Chiu; Lisa Daniels; Jessica Wright; Caleb Pedersen Shortcuts in failure analysis are sometimes to save time or money or because equipment or expertise is unavailable. This article presents simple but effective solutions in four areas, including deprocessing, FIB milling...
Journal Articles
EDFA Technical Articles (2016) 18 (4): 30–40.
Published: 01 November 2016
... complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results...
Journal Articles
EDFA Technical Articles (2018) 20 (2): 26–32.
Published: 01 May 2018
...Lucille A. Giannuzzi Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron...
Journal Articles
EDFA Technical Articles (2000) 2 (4): 10–11.
Published: 01 November 2000
... of silicon device FIB cross sections. The best cross sectioning results for observing the structure of the mushroom shaped gate were obtained when we specifically milled through the air bridge. Air bridges and gaps also occur in MEMs devices. A future publication will address the issues associated...
Journal Articles
EDFA Technical Articles (2014) 16 (1): 18–23.
Published: 01 February 2014
... microscope (TEM) imaging and analysis. that the emergence of dislocations, carbide dissolu- It was discovered that cryogenic FIB milling of the tion, evolution of subgrain/subgrain boundaries, Cu2ZnSn(S,Se)4 material eliminated artifacts observed in room-temperature FIB milling. Cryo-FIB samples and dynamic...
Journal Articles
EDFA Technical Articles (2009) 11 (2): 23–29.
Published: 01 May 2009
... transistor, which was subsequently identified as tantalum. Such defects, as the authors explain, are common in damascene processes when materials are not properly removed during etching. Copyright © ASM International® 2009 2009 ASM International FIB milling selective dielectric removal thin film...
Journal Articles
EDFA Technical Articles (2023) 25 (1): 4–8.
Published: 01 February 2023
... damage and contamination from the FIB milling process typically degrades the electronic structure of devices. The latter (micro-fabrication) approach enables precise control of device features, straightforward electrical connection, and entirely avoids the damage and contamination associated with FIB...
Journal Articles
EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... in the suspect block of circuitry. After removal of the thinned die from the package, a frontside cross section was made using the focused ion beam (FIB) mill. Scanning electron microscope (SEM) analysis of the cross section revealed a defect at the TIVA site. A short between the two metal lines at the defect...
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
... that will be necessary to keep FIB-based etching, milling, and deposition viable in the future. Copyright © ASM International® 2008 2008 ASM International copper deposition dielectrics etching FIB circuit edit focused ion beam interconnect milling httpsdoi.org/10.31399/asm.edfa.2008-3.p006 EDFAAO...
Journal Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... that combine high milling nected to the TSV metallization and silicon substrate. rates for packaging materials and stacked dies with Then, LIT defocus series were performed by apply- high precision and spatial resolution. Today, com- ing a supply voltage of 24.5 V, producing a leakage bined FIB-SEM systems...
Journal Articles
EDFA Technical Articles (2010) 12 (1): 6–12.
Published: 01 February 2010
... and promotes the implementation of all edits at the contact level to avoid milling into the metal layers. This article describes the FIB-based circuit edit process and presents several case studies demonstrating its use on 65 nm technology devices. Copyright © ASM International® 2010 2010 ASM International...
Journal Articles
EDFA Technical Articles (2015) 17 (3): 4–10.
Published: 01 August 2015
... for another round of nanoprobing. When an analysis must sequentially nanoprobe four to ten layers of metal, the turnaround time and success rate of the analysis becomes problematic. For site-specific delayering, failure analysts often use focused ion beam (FIB) milling, as an alternative to mechanical...
Journal Articles
EDFA Technical Articles (2001) 3 (1): 35–35C.
Published: 01 February 2001
... that is low enough for visual endpointing, depositing a FIB insulator over the whole trench to protect the surface from excessive chemical damage, and exposing the desired signal line similar to conventional front-side FIB work. Fig 1. (a-left) Image of a 100 µm x 100 µm trench milled with the FC FIB...
Journal Articles
EDFA Technical Articles (2019) 21 (4): 22–28.
Published: 01 November 2019
... layer of platinum was deposited between the two freshly created pads using the electron beam (Fig. 3). edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 4 24 This layer serves both as a protective layer against possible unwanted milling from the FIB and as a baseline resistor to monitor...
Journal Articles
EDFA Technical Articles (2021) 23 (4): 4–13.
Published: 01 November 2021
... methods for material removal. Two methods are considered for their utility in this 45 nm node SPI decomposition: reactive ion etching (RIE) and plasma focused ion beam (P-FIB) milling. Reactive ion etching is a technique that exposes the sample of interest to a plasma of reactive ion species inside...
Journal Articles
EDFA Technical Articles (2016) 18 (1): 30–35.
Published: 01 February 2016
... delayering PFIB milling plasma focused ion beam site-specific analysis 3 0 httpsdoi.org/10.31399/asm.edfa.2016-1.p030 EDFAAO (2016) 1:30-35 1537-0755/$19.00 ©ASM International® ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 1 PLASMA FIB PROVIDES VITAL DELAYERING AND SITESPECIFIC FAILURE ANALYSIS...
Journal Articles
EDFA Technical Articles (2011) 13 (2): 12–18.
Published: 01 May 2011
... for interconnects as technology features shrank below the 250 nm node. For multiple reasons, thick copper planes are used. Milling through these thick copper planes to enable CE access has been tremendously challenging and time-consuming. A successful focused ion beam (FIB) edit recipe must 12 Electronic Device...