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FIB milling
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Journal Articles
EDFA Technical Articles (2019) 21 (4): 4–12.
Published: 01 November 2019
..., however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm...
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TEM specimens prepared using a Ga FIB are susceptible to artifacts, such as surface amorphization and ion-implanted layers, that can be problematic in advanced technology nodes, particularly for FinFETs. As this article shows, however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm FinFET technologies currently in production.
Journal Articles
EDFA Technical Articles (2011) 13 (3): 18–26.
Published: 01 August 2011
... holography, tomography, high-angle annular dark-field scanning, and electron energy-loss spectroscopy. In most cases, achieving optimal quality requires the use of alternate FIB milling angles, as in plan-view, sideways, and backside milling, all of which are discussed. This article discusses...
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This article discusses the practice of FIB-based in situ lift-out, a sample preparation method that has proven particularly useful for failure analysis. It explains how samples are now being made for a wide range of TEM techniques, including holography, tomography, high-angle annular dark-field scanning, and electron energy-loss spectroscopy. In most cases, achieving optimal quality requires the use of alternate FIB milling angles, as in plan-view, sideways, and backside milling, all of which are discussed.
Journal Articles
EDFA Technical Articles (2013) 15 (3): 12–19.
Published: 01 August 2013
...Nicholas Antoniou FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM...
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FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM techniques provide a solution. It describes the basic setup of a FIB-SEM system and provides examples of its use on InN nanocrystals, GaN films, and copper-containing multilayer photovoltaic materials.
Journal Articles
EDFA Technical Articles (2011) 13 (3): 28–33.
Published: 01 August 2011
...Jason Higgins; Re-Long Chiu; Lisa Daniels; Jessica Wright; Caleb Pedersen Shortcuts in failure analysis are sometimes to save time or money or because equipment or expertise is unavailable. This article presents simple but effective solutions in four areas, including deprocessing, FIB milling...
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Shortcuts in failure analysis are sometimes to save time or money or because equipment or expertise is unavailable. This article presents simple but effective solutions in four areas, including deprocessing, FIB milling, microcleaving, and TEM sample preparation, that may help analysts work through or around such situations.
Journal Articles
EDFA Technical Articles (2016) 18 (4): 30–40.
Published: 01 November 2016
... complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results...
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The complexity of sample preparation and deprocessing has risen exponentially with the emergence of 2.5-D and 3D packages. This article provides answers and insights on how to deal with the challenges of increasingly complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results confirm the potential of all three techniques and indicate that a fully nondestructive integration flow for 3D packages may be achievable with further development and optimization.
Journal Articles
EDFA Technical Articles (2018) 20 (2): 26–32.
Published: 01 May 2018
...Lucille A. Giannuzzi Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron...
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Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron microscopy, including the use slotted half-grids and vacuum-assisted lift out for plan-view analysis.
Journal Articles
EDFA Technical Articles (2000) 2 (4): 10–11.
Published: 01 November 2000
... of silicon device FIB cross sections. The best cross sectioning results for observing the structure of the mushroom shaped gate were obtained when we specifically milled through the air bridge. Air bridges and gaps also occur in MEMs devices. A future publication will address the issues associated...
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High-frequency devices such as monolithic microwave ICs (MMICs) are used in telecommunication devices as well as in satellites for earth imaging and radar applications. This article discusses the use of focused ion beam (FIB) cross sectioning and sample decoration techniques for analyzing MMICs and III-V materials.
Journal Articles
EDFA Technical Articles (2014) 16 (1): 18–23.
Published: 01 February 2014
... microscope (TEM) imaging and analysis. that the emergence of dislocations, carbide dissolu- It was discovered that cryogenic FIB milling of the tion, evolution of subgrain/subgrain boundaries, Cu2ZnSn(S,Se)4 material eliminated artifacts observed in room-temperature FIB milling. Cryo-FIB samples and dynamic...
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The sixth FIB-SEM workshop was held March 1, 2013, in Cambridge, Mass. This article provides a summary of the event along with highlights from the 18 paper presentations.
Journal Articles
EDFA Technical Articles (2009) 11 (2): 23–29.
Published: 01 May 2009
... transistor, which was subsequently identified as tantalum. Such defects, as the authors explain, are common in damascene processes when materials are not properly removed during etching. Copyright © ASM International® 2009 2009 ASM International FIB milling selective dielectric removal thin film...
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Thin film anomalies cause many device failures but they are often difficult to see. In this article, the authors explain how they found and identified an 8 to 10 nm film of tantalum causing pin shorts in a majority of ASIC modules from a particular lot. Initial attempts to delayer some of the failed modules resulted in the loss of the failure signal. It was then decided to use a focused ion beam to selectively mill through the interlayer dielectric. During milling, a secondary electron image revealed anomalous material between the fingers of a power transistor, which was subsequently identified as tantalum. Such defects, as the authors explain, are common in damascene processes when materials are not properly removed during etching.
Journal Articles
EDFA Technical Articles (2023) 25 (1): 4–8.
Published: 01 February 2023
... damage and contamination from the FIB milling process typically degrades the electronic structure of devices. The latter (micro-fabrication) approach enables precise control of device features, straightforward electrical connection, and entirely avoids the damage and contamination associated with FIB...
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This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.
Journal Articles
EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... in the suspect block of circuitry. After removal of the thinned die from the package, a frontside cross section was made using the focused ion beam (FIB) mill. Scanning electron microscope (SEM) analysis of the cross section revealed a defect at the TIVA site. A short between the two metal lines at the defect...
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This article provides a high-level review of the tools and techniques used for backside analysis. It discusses the use of laser scanning and conventional microscopy, liquid and solid immersion lenses, photon emission microscopy (PEM), and laser-based fault isolation methods with emphasis on light-induced voltage alteration (LIVA). It explains how laser voltage probing is used for backside waveform acquisition and describes backside sample preparation and deprocessing techniques including parallel polishing and milling, laser chemical etching, and FIB circuit edit and modification.
Journal Articles
EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
... that will be necessary to keep FIB-based etching, milling, and deposition viable in the future. Copyright © ASM International® 2008 2008 ASM International copper deposition dielectrics etching FIB circuit edit focused ion beam interconnect milling httpsdoi.org/10.31399/asm.edfa.2008-3.p006 EDFAAO...
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FIB circuit edit tools and techniques have thus far kept pace with the evolution of interconnect materials in ICs and downward scaling of device dimensions. This article assesses the coming challenges for FIB circuit edit technology and the changes that will be necessary to keep FIB-based etching, milling, and deposition viable in the future.
Journal Articles
EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... that combine high milling nected to the TSV metallization and silicon substrate. rates for packaging materials and stacked dies with Then, LIT defocus series were performed by apply- high precision and spatial resolution. Today, com- ing a supply voltage of 24.5 V, producing a leakage bined FIB-SEM systems...
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Failure analysis is becoming increasingly difficult with the emergence of 3D integrated packages due to their complex layouts, diverse materials, shrinking dimensions, and tight fits. This article demonstrates several FA techniques, including high-frequency scanning acoustic microscopy, lock-in thermography, and FIB cross-sectioning in combination with plasma ion etching or laser ablation. Detailed case studies show how the various methods can be used to analyze bonding integrity between different materials, chip-to-chip interface structures, buried interconnect defects, and through-silicon vias at either the device or package level.
Journal Articles
EDFA Technical Articles (2010) 12 (1): 6–12.
Published: 01 February 2010
... and promotes the implementation of all edits at the contact level to avoid milling into the metal layers. This article describes the FIB-based circuit edit process and presents several case studies demonstrating its use on 65 nm technology devices. Copyright © ASM International® 2010 2010 ASM International...
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Designing circuit edits at the contact level offers tremendous advantages in reliability and yield success over similar edits designed in the metal stack. To that end, a full-thickness backside circuit edit strategy has been developed that eliminates part thinning and promotes the implementation of all edits at the contact level to avoid milling into the metal layers. This article describes the FIB-based circuit edit process and presents several case studies demonstrating its use on 65 nm technology devices.
Journal Articles
EDFA Technical Articles (2015) 17 (3): 4–10.
Published: 01 August 2015
... for another round of nanoprobing. When an analysis must sequentially nanoprobe four to ten layers of metal, the turnaround time and success rate of the analysis becomes problematic. For site-specific delayering, failure analysts often use focused ion beam (FIB) milling, as an alternative to mechanical...
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Atomic force microscopy has been a consistent factor in the advancements of the past decade in IC nanoprobing and failure analysis. Over that time, many new atomic force measurement techniques have been adopted by the IC analysis community, including scanning conductance, scanning capacitance, pulsed current-voltage, and capacitance-voltage spectroscopy. More recently, two new techniques have emerged: diamond probe milling and electrostatic force microscopy (EFM). As the authors of the article explain, diamond probe milling using an atomic force microscope is a promising new method for in situ, localized, precision delayering of ICs, while active EFM is a nondestructive alternative to EBAC microscopy for localization of opens in IC analysis.
Journal Articles
EDFA Technical Articles (2001) 3 (1): 35–35C.
Published: 01 February 2001
... that is low enough for visual endpointing, depositing a FIB insulator over the whole trench to protect the surface from excessive chemical damage, and exposing the desired signal line similar to conventional front-side FIB work. Fig 1. (a-left) Image of a 100 µm x 100 µm trench milled with the FC FIB...
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Flip chip mounted devices are difficult debug using conventional FIB tools because their internal circuitry is not easily accessible. New flip chip focused ion beam (FC FIB) systems overcome this limitation, however, making it possible to access circuits from the backside through the bulk silicon. In this article, the authors explain how they used the new system to gain access to signal lines for backside waveform acquisition. They also describe some of the procedures they developed to repair and modify flip chip circuits from the backside and prepare cross-section samples from the backside for failure analysis and characterization.
Journal Articles
EDFA Technical Articles (2019) 21 (4): 22–28.
Published: 01 November 2019
... layer of platinum was deposited between the two freshly created pads using the electron beam (Fig. 3). edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 4 24 This layer serves both as a protective layer against possible unwanted milling from the FIB and as a baseline resistor to monitor...
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A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.
Journal Articles
EDFA Technical Articles (2021) 23 (4): 4–13.
Published: 01 November 2021
... methods for material removal. Two methods are considered for their utility in this 45 nm node SPI decomposition: reactive ion etching (RIE) and plasma focused ion beam (P-FIB) milling. Reactive ion etching is a technique that exposes the sample of interest to a plasma of reactive ion species inside...
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Further development of SEM-based feature extraction tools for design validation and failure analysis is contingent on reliable sample preparation methods. This article describes how a delayering framework for 130 nm technology was adapted and used on a 45 nm SPI module consisting of 11 metal layers, 10 via layers, two layers of polysilicon, and an active silicon layer. It explains how different polishing and etching methods are used to expose each layer with sufficient contrast for SEM imaging and subsequent feature extraction. By combining polygon sets representing each layer, the full design of the device was reconstructed as shown in one of the images.
Journal Articles
EDFA Technical Articles (2016) 18 (1): 30–35.
Published: 01 February 2016
... delayering PFIB milling plasma focused ion beam site-specific analysis 3 0 httpsdoi.org/10.31399/asm.edfa.2016-1.p030 EDFAAO (2016) 1:30-35 1537-0755/$19.00 ©ASM International® ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 18 NO. 1 PLASMA FIB PROVIDES VITAL DELAYERING AND SITESPECIFIC FAILURE ANALYSIS...
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Plasma focused ion beam (PFIB) systems can generate ion beams with much higher current and are therefore able to remove larger volumes of material at much faster rates while still maintaining precise control of the beam and its milling action. This article explains how the improved performance of PFIB is leading to new applications in delayering, deprocessing, and site-specific failure analysis.
Journal Articles
EDFA Technical Articles (2011) 13 (2): 12–18.
Published: 01 May 2011
... for interconnects as technology features shrank below the 250 nm node. For multiple reasons, thick copper planes are used. Milling through these thick copper planes to enable CE access has been tremendously challenging and time-consuming. A successful focused ion beam (FIB) edit recipe must 12 Electronic Device...
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The presence of copper layers separated by low-k dielectrics in today’s ICs is a major problem for circuit edit engineers. This article explains why and presents a solution that addresses the challenges CE engineers face. According to the authors, the difficulties are primarily due to the interaction of the ion beam with variations in copper grain orientation, the effects of halogen corrosion, and the presence of CuF. As a result, copper milling tends to be uneven and edit times tend to be quite long. The solution presented is based on a chemically-assisted milling and etching process that quickly and uniformly removes copper and dielectric layers while maintaining planarity.
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