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Journal Articles
Post-FIB Cleaning of TEM Specimens from 14 nm and Other FinFETs by Concentrated Argon Ion Milling
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EDFA Technical Articles (2019) 21 (4): 4–12.
Published: 01 November 2019
..., however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm...
Abstract
View articletitled, Post-<span class="search-highlight">FIB</span> Cleaning of TEM Specimens from 14 nm and Other FinFETs by Concentrated Argon Ion <span class="search-highlight">Milling</span>
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for article titled, Post-<span class="search-highlight">FIB</span> Cleaning of TEM Specimens from 14 nm and Other FinFETs by Concentrated Argon Ion <span class="search-highlight">Milling</span>
TEM specimens prepared using a Ga FIB are susceptible to artifacts, such as surface amorphization and ion-implanted layers, that can be problematic in advanced technology nodes, particularly for FinFETs. As this article shows, however, post-FIB cleaning via concentrated argon ion milling makes for a fast and effective specimen preparation process for FinFET devices controlled to a thickness of less than 20 nm. Although the results presented here are based on 14 nm node FinFETs, the method is also applicable to the 10 and 7 nm FinFET technologies currently in production.
Journal Articles
Precise Final Specimen Thinning by Concentrated Argon Ion Beam Milling of Plan View TEM Specimens Prepared in the Xenon Plasma FIB
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EDFA Technical Articles (2024) 26 (4): 20–26.
Published: 01 November 2024
... specimens due to its large-volume milling capabilities.[4] However, producing electron-transparent TEM specimens using a Xe pFIB system requires an adjustment of stage tilt and milling pattern placement; it deviates from the standard Ga FIB method because of the relatively large Xe beam and its wide beam...
Abstract
View articletitled, Precise Final Specimen Thinning by Concentrated Argon Ion Beam <span class="search-highlight">Milling</span> of Plan View TEM Specimens Prepared in the Xenon Plasma <span class="search-highlight">FIB</span>
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for article titled, Precise Final Specimen Thinning by Concentrated Argon Ion Beam <span class="search-highlight">Milling</span> of Plan View TEM Specimens Prepared in the Xenon Plasma <span class="search-highlight">FIB</span>
Xenon plasma focused ion beam specimen preparation is ideal for preparing plan view TEM specimens due to its large-volume-milling capabilities. This article describes concentrated Ar ion beam milling using low energy as a post-pFIB final thinning step of plan view TEM specimens from a phase change memory device. Precise control of specimen thinning is achieved, which results in high-quality specimens with pristine surfaces and a large field of view for TEM characterization.
Journal Articles
Variations on FIB in situ Lift-Out for TEM Sample Preparation
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EDFA Technical Articles (2011) 13 (3): 18–26.
Published: 01 August 2011
... holography, tomography, high-angle annular dark-field scanning, and electron energy-loss spectroscopy. In most cases, achieving optimal quality requires the use of alternate FIB milling angles, as in plan-view, sideways, and backside milling, all of which are discussed. This article discusses...
Abstract
View articletitled, Variations on <span class="search-highlight">FIB</span> in situ Lift-Out for TEM Sample Preparation
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for article titled, Variations on <span class="search-highlight">FIB</span> in situ Lift-Out for TEM Sample Preparation
This article discusses the practice of FIB-based in situ lift-out, a sample preparation method that has proven particularly useful for failure analysis. It explains how samples are now being made for a wide range of TEM techniques, including holography, tomography, high-angle annular dark-field scanning, and electron energy-loss spectroscopy. In most cases, achieving optimal quality requires the use of alternate FIB milling angles, as in plan-view, sideways, and backside milling, all of which are discussed.
Journal Articles
Failure Analysis of Electronic Material Using Cryogenic FIB-SEM
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EDFA Technical Articles (2013) 15 (3): 12–19.
Published: 01 August 2013
...Nicholas Antoniou FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM...
Abstract
View articletitled, Failure Analysis of Electronic Material Using Cryogenic <span class="search-highlight">FIB</span>-SEM
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for article titled, Failure Analysis of Electronic Material Using Cryogenic <span class="search-highlight">FIB</span>-SEM
FIB milling is difficult if not impossible with III-V compound semiconductors and certain interconnect metals because the materials do not react well with the gallium used in most FIB systems. This article discusses the nature of the problem and explains how cryogenic FIB-SEM techniques provide a solution. It describes the basic setup of a FIB-SEM system and provides examples of its use on InN nanocrystals, GaN films, and copper-containing multilayer photovoltaic materials.
Journal Articles
Recent Innovations in Ex Situ Lift Out Applications and Techniques
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EDFA Technical Articles (2018) 20 (2): 26–32.
Published: 01 May 2018
...Lucille A. Giannuzzi Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron...
Abstract
View articletitled, Recent Innovations in Ex Situ Lift Out Applications and Techniques
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for article titled, Recent Innovations in Ex Situ Lift Out Applications and Techniques
Ex-situ lift out (EXLO) techniques rely on van der Waals forces to transfer FIB milled specimens to various types of carriers using a glass probe micromanipulator. This article describes some of the latest EXLO techniques for site specific scanning transmission electron microscopy, including the use slotted half-grids and vacuum-assisted lift out for plan-view analysis.
Journal Articles
Failure Analysis Tricks and Treats
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EDFA Technical Articles (2011) 13 (3): 28–33.
Published: 01 August 2011
...Jason Higgins; Re-Long Chiu; Lisa Daniels; Jessica Wright; Caleb Pedersen Shortcuts in failure analysis are sometimes to save time or money or because equipment or expertise is unavailable. This article presents simple but effective solutions in four areas, including deprocessing, FIB milling...
Abstract
View articletitled, Failure Analysis Tricks and Treats
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for article titled, Failure Analysis Tricks and Treats
Shortcuts in failure analysis are sometimes to save time or money or because equipment or expertise is unavailable. This article presents simple but effective solutions in four areas, including deprocessing, FIB milling, microcleaving, and TEM sample preparation, that may help analysts work through or around such situations.
Journal Articles
Emerging Techniques For 2-D/2.5-D/3-D Package Failure Analysis: EOTPR, 3-D X-Ray, and Plasma FIB
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EDFA Technical Articles (2016) 18 (4): 30–40.
Published: 01 November 2016
... complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results...
Abstract
View articletitled, Emerging Techniques For 2-D/2.5-D/3-D Package Failure Analysis: EOTPR, 3-D X-Ray, and Plasma <span class="search-highlight">FIB</span>
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for article titled, Emerging Techniques For 2-D/2.5-D/3-D Package Failure Analysis: EOTPR, 3-D X-Ray, and Plasma <span class="search-highlight">FIB</span>
The complexity of sample preparation and deprocessing has risen exponentially with the emergence of 2.5-D and 3D packages. This article provides answers and insights on how to deal with the challenges of increasingly complex semiconductor packages. After identifying pressing issues and potential bottlenecks with state-of-the-art FA flows, the authors present two case studies demonstrating the capabilities of electro-optical terahertz pulse reflectometry (EOTPR), plasma FIB milling, and 3D X-ray imaging. The FA results confirm the potential of all three techniques and indicate that a fully nondestructive integration flow for 3D packages may be achievable with further development and optimization.
Journal Articles
Focused Ion Beam Applied to Non-Silicon Material: Cross Sectioning Microwave Devices
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EDFA Technical Articles (2000) 2 (4): 10–11.
Published: 01 November 2000
... of silicon device FIB cross sections. The best cross sectioning results for observing the structure of the mushroom shaped gate were obtained when we specifically milled through the air bridge. Air bridges and gaps also occur in MEMs devices. A future publication will address the issues associated...
Abstract
View articletitled, Focused Ion Beam Applied to Non-Silicon Material: Cross Sectioning Microwave Devices
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for article titled, Focused Ion Beam Applied to Non-Silicon Material: Cross Sectioning Microwave Devices
High-frequency devices such as monolithic microwave ICs (MMICs) are used in telecommunication devices as well as in satellites for earth imaging and radar applications. This article discusses the use of focused ion beam (FIB) cross sectioning and sample decoration techniques for analyzing MMICs and III-V materials.
Journal Articles
Sixth FIB-SEM Workshop
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EDFA Technical Articles (2014) 16 (1): 18–23.
Published: 01 February 2014
... microscope (TEM) imaging and analysis. that the emergence of dislocations, carbide dissolu- It was discovered that cryogenic FIB milling of the tion, evolution of subgrain/subgrain boundaries, Cu2ZnSn(S,Se)4 material eliminated artifacts observed in room-temperature FIB milling. Cryo-FIB samples and dynamic...
Abstract
View articletitled, Sixth <span class="search-highlight">FIB</span>-SEM Workshop
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for article titled, Sixth <span class="search-highlight">FIB</span>-SEM Workshop
The sixth FIB-SEM workshop was held March 1, 2013, in Cambridge, Mass. This article provides a summary of the event along with highlights from the 18 paper presentations.
Journal Articles
Selective Dielectric Removal for Failure Analysis of Thin Films on Semiconductor Devices
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EDFA Technical Articles (2009) 11 (2): 23–29.
Published: 01 May 2009
... transistor, which was subsequently identified as tantalum. Such defects, as the authors explain, are common in damascene processes when materials are not properly removed during etching. Copyright © ASM International® 2009 2009 ASM International FIB milling selective dielectric removal thin film...
Abstract
View articletitled, Selective Dielectric Removal for Failure Analysis of Thin Films on Semiconductor Devices
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for article titled, Selective Dielectric Removal for Failure Analysis of Thin Films on Semiconductor Devices
Thin film anomalies cause many device failures but they are often difficult to see. In this article, the authors explain how they found and identified an 8 to 10 nm film of tantalum causing pin shorts in a majority of ASIC modules from a particular lot. Initial attempts to delayer some of the failed modules resulted in the loss of the failure signal. It was then decided to use a focused ion beam to selectively mill through the interlayer dielectric. During milling, a secondary electron image revealed anomalous material between the fingers of a power transistor, which was subsequently identified as tantalum. Such defects, as the authors explain, are common in damascene processes when materials are not properly removed during etching.
Journal Articles
Making Connections: Challenges and Opportunities for In Situ TEM Biasing
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EDFA Technical Articles (2023) 25 (1): 4–8.
Published: 01 February 2023
... damage and contamination from the FIB milling process typically degrades the electronic structure of devices. The latter (micro-fabrication) approach enables precise control of device features, straightforward electrical connection, and entirely avoids the damage and contamination associated with FIB...
Abstract
View articletitled, Making Connections: Challenges and Opportunities for In Situ TEM Biasing
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for article titled, Making Connections: Challenges and Opportunities for In Situ TEM Biasing
This article discusses sample preparation challenges that have impeded progress in producing bias-enabled TEM samples from electronic components, as well as strategies to mitigate these issues.
Journal Articles
Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques
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EDFA Technical Articles (2019) 21 (4): 22–28.
Published: 01 November 2019
... layer of platinum was deposited between the two freshly created pads using the electron beam (Fig. 3). edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 21 NO. 4 24 This layer serves both as a protective layer against possible unwanted milling from the FIB and as a baseline resistor to monitor...
Abstract
View articletitled, Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques
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for article titled, Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques
A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.
Journal Articles
Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
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EDFA Technical Articles (2012) 14 (2): 14–20.
Published: 01 May 2012
... that combine high milling nected to the TSV metallization and silicon substrate. rates for packaging materials and stacked dies with Then, LIT defocus series were performed by apply- high precision and spatial resolution. Today, com- ing a supply voltage of 24.5 V, producing a leakage bined FIB-SEM systems...
Abstract
View articletitled, Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
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for article titled, Emerging Techniques for 3-D Integrated System-in-Package Failure Diagnostics
Failure analysis is becoming increasingly difficult with the emergence of 3D integrated packages due to their complex layouts, diverse materials, shrinking dimensions, and tight fits. This article demonstrates several FA techniques, including high-frequency scanning acoustic microscopy, lock-in thermography, and FIB cross-sectioning in combination with plasma ion etching or laser ablation. Detailed case studies show how the various methods can be used to analyze bonding integrity between different materials, chip-to-chip interface structures, buried interconnect defects, and through-silicon vias at either the device or package level.
Journal Articles
Backside Analysis: Focused-Ion-Beam Applications for Flip Chip Packaged ICs
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EDFA Technical Articles (2001) 3 (1): 35–35C.
Published: 01 February 2001
... that is low enough for visual endpointing, depositing a FIB insulator over the whole trench to protect the surface from excessive chemical damage, and exposing the desired signal line similar to conventional front-side FIB work. Fig 1. (a-left) Image of a 100 µm x 100 µm trench milled with the FC FIB...
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View articletitled, Backside Analysis: Focused-Ion-Beam Applications for Flip Chip Packaged ICs
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for article titled, Backside Analysis: Focused-Ion-Beam Applications for Flip Chip Packaged ICs
Flip chip mounted devices are difficult debug using conventional FIB tools because their internal circuitry is not easily accessible. New flip chip focused ion beam (FC FIB) systems overcome this limitation, however, making it possible to access circuits from the backside through the bulk silicon. In this article, the authors explain how they used the new system to gain access to signal lines for backside waveform acquisition. They also describe some of the procedures they developed to repair and modify flip chip circuits from the backside and prepare cross-section samples from the backside for failure analysis and characterization.
Journal Articles
Emerging Techniques in Atomic Force Microscopy: Diamond Milling and Electrostatic Force Microscopy
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EDFA Technical Articles (2015) 17 (3): 4–10.
Published: 01 August 2015
... for another round of nanoprobing. When an analysis must sequentially nanoprobe four to ten layers of metal, the turnaround time and success rate of the analysis becomes problematic. For site-specific delayering, failure analysts often use focused ion beam (FIB) milling, as an alternative to mechanical...
Abstract
View articletitled, Emerging Techniques in Atomic Force Microscopy: Diamond <span class="search-highlight">Milling</span> and Electrostatic Force Microscopy
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for article titled, Emerging Techniques in Atomic Force Microscopy: Diamond <span class="search-highlight">Milling</span> and Electrostatic Force Microscopy
Atomic force microscopy has been a consistent factor in the advancements of the past decade in IC nanoprobing and failure analysis. Over that time, many new atomic force measurement techniques have been adopted by the IC analysis community, including scanning conductance, scanning capacitance, pulsed current-voltage, and capacitance-voltage spectroscopy. More recently, two new techniques have emerged: diamond probe milling and electrostatic force microscopy (EFM). As the authors of the article explain, diamond probe milling using an atomic force microscope is a promising new method for in situ, localized, precision delayering of ICs, while active EFM is a nondestructive alternative to EBAC microscopy for localization of opens in IC analysis.
Journal Articles
Backside FIB Circuit Editing—A Strategy to Hit 100% Yield Success
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EDFA Technical Articles (2010) 12 (1): 6–12.
Published: 01 February 2010
... and promotes the implementation of all edits at the contact level to avoid milling into the metal layers. This article describes the FIB-based circuit edit process and presents several case studies demonstrating its use on 65 nm technology devices. Copyright © ASM International® 2010 2010 ASM International...
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View articletitled, Backside <span class="search-highlight">FIB</span> Circuit Editing—A Strategy to Hit 100% Yield Success
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for article titled, Backside <span class="search-highlight">FIB</span> Circuit Editing—A Strategy to Hit 100% Yield Success
Designing circuit edits at the contact level offers tremendous advantages in reliability and yield success over similar edits designed in the metal stack. To that end, a full-thickness backside circuit edit strategy has been developed that eliminates part thinning and promotes the implementation of all edits at the contact level to avoid milling into the metal layers. This article describes the FIB-based circuit edit process and presents several case studies demonstrating its use on 65 nm technology devices.
Journal Articles
A Sample Preparation Workflow for Delayering a 45 nm Node Serial Peripheral Interface Module
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EDFA Technical Articles (2021) 23 (4): 4–13.
Published: 01 November 2021
... methods for material removal. Two methods are considered for their utility in this 45 nm node SPI decomposition: reactive ion etching (RIE) and plasma focused ion beam (P-FIB) milling. Reactive ion etching is a technique that exposes the sample of interest to a plasma of reactive ion species inside...
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View articletitled, A Sample Preparation Workflow for Delayering a 45 nm Node Serial Peripheral Interface Module
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for article titled, A Sample Preparation Workflow for Delayering a 45 nm Node Serial Peripheral Interface Module
Further development of SEM-based feature extraction tools for design validation and failure analysis is contingent on reliable sample preparation methods. This article describes how a delayering framework for 130 nm technology was adapted and used on a 45 nm SPI module consisting of 11 metal layers, 10 via layers, two layers of polysilicon, and an active silicon layer. It explains how different polishing and etching methods are used to expose each layer with sufficient contrast for SEM imaging and subsequent feature extraction. By combining polygon sets representing each layer, the full design of the device was reconstructed as shown in one of the images.
Journal Articles
Transforming an Industry: An Inventor’s Tale of FIB In Situ Lift-Out
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EDFA Technical Articles (2023) 25 (1): 20–27.
Published: 01 February 2023
... polished thickness as prepared by the TEM lab. The bulk milling time to thin to a 100-nm thick sample ranged from 4 to 8 hours, and one could not walk away during the bulk FIB milling, due to the need to stay alert and frequently correct for sample movement or beam drift caused by charging. Tom Moore...
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View articletitled, Transforming an Industry: An Inventor’s Tale of <span class="search-highlight">FIB</span> In Situ Lift-Out
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for article titled, Transforming an Industry: An Inventor’s Tale of <span class="search-highlight">FIB</span> In Situ Lift-Out
This is the story of how the mainstream Omniprobe FIB lift-out solution was invented and delivered to the market.
Journal Articles
Failure Analysis Turned Upside Down: A Review of Backside Analysis Techniques
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EDFA Technical Articles (2003) 5 (4): 13–24.
Published: 01 November 2003
... in the suspect block of circuitry. After removal of the thinned die from the package, a frontside cross section was made using the focused ion beam (FIB) mill. Scanning electron microscope (SEM) analysis of the cross section revealed a defect at the TIVA site. A short between the two metal lines at the defect...
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View articletitled, Failure Analysis Turned Upside Down: A Review of Backside Analysis Techniques
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for article titled, Failure Analysis Turned Upside Down: A Review of Backside Analysis Techniques
This article provides a high-level review of the tools and techniques used for backside analysis. It discusses the use of laser scanning and conventional microscopy, liquid and solid immersion lenses, photon emission microscopy (PEM), and laser-based fault isolation methods with emphasis on light-induced voltage alteration (LIVA). It explains how laser voltage probing is used for backside waveform acquisition and describes backside sample preparation and deprocessing techniques including parallel polishing and milling, laser chemical etching, and FIB circuit edit and modification.
Journal Articles
Can FIB Circuit Edit Successfully Address Interconnect Trends?
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EDFA Technical Articles (2008) 10 (3): 6–16.
Published: 01 August 2008
... that will be necessary to keep FIB-based etching, milling, and deposition viable in the future. Copyright © ASM International® 2008 2008 ASM International copper deposition dielectrics etching FIB circuit edit focused ion beam interconnect milling httpsdoi.org/10.31399/asm.edfa.2008-3.p006 EDFAAO...
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View articletitled, Can <span class="search-highlight">FIB</span> Circuit Edit Successfully Address Interconnect Trends?
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for article titled, Can <span class="search-highlight">FIB</span> Circuit Edit Successfully Address Interconnect Trends?
FIB circuit edit tools and techniques have thus far kept pace with the evolution of interconnect materials in ICs and downward scaling of device dimensions. This article assesses the coming challenges for FIB circuit edit technology and the changes that will be necessary to keep FIB-based etching, milling, and deposition viable in the future.
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