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Search Results for C-V curves
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EDFA Technical Articles (2017) 19 (4): 12–20.
Published: 01 November 2017
... concentrations, and nanoscale C-V curves for different semiconductor and dielectric materials. It also explains how measured results compare with theoretical models, confirming the validity of each approach. Scanning microwave impedance microscopy (sMIM) is a relatively new method for making electrical...
EDFA Technical Articles (2001) 3 (2): 15–17.
Published: 01 May 2001
..., base, collector, and polycontact structures. VCmin qualitatively maps the flatband voltage and is black for ntype and white for p-type. A zoomed portion of this image (bottom) is shown with the C(V) curves plotted in each pixel serving to estimate the depletion width. Image size is 3,000 x 1,500 nm2...
EDFA Technical Articles (2000) 2 (2): 12–24.
Published: 01 May 2000
... of the resistance degradation while varying the voltage enabled the voltage acceleration factor to be calculated. This was done from 50 V to 330 V by monitoring and recording the length of time required for the capacitor current to reach 10 nA. The leakage scale on the curve tracer monitored and controlled...
EDFA Technical Articles (2005) 7 (3): 22–28.
Published: 01 August 2005
... is needed. Historically, this has been done by pico-probing or, nondestructively, by the low yield analysis (LYA) test mode DFT technique. Upon obtaining transistor I-V curves from reference and defective SRAM cells, simulations are performed to correlate the curves to known defect mechanisms. Because...
EDFA Technical Articles (2005) 7 (2): 14–19.
Published: 01 May 2005
..., the plate voltage, the substrate, and the source voltage at the trench are grounded. Figure 4 shows the input characteristic IDS (VGS) at VDS = 1.5 V and T = 85 °C for the structure in Fig. 3. The different VDT voltages are distinguished by different line symbols. The threshold shift is clearly observable...
EDFA Technical Articles (2020) 22 (1): 20–25.
Published: 01 February 2020
... to be detected. mode. In fact, the tip can be programmed to stay long enough to complete a spectrum measurement (such as I-V curve) at each pixel. SILICON NANOSCALE STEPS AND DISLOCATIONS During recent development of high voltage power devices, failures occurred due to source-drain (S/D) leakage in n-type...
EDFA Technical Articles (2008) 10 (2): 12–18.
Published: 01 May 2008
... simultaneously, they can be overlaid to indicate the exact position of the device response. Static Techniques (c) Fig. 3 (d) Graphs showing shift in device I-V curves caused by laser injection. The magnitude of each effect depends on the specific device geometry, material, laser power, and so...
EDFA Technical Articles (2000) 2 (4): 36–38.
Published: 01 November 2000
... failed tests after dynamic burn-in. The burn-in conditions used a vector set at 6 V for 168 hours and 125°C. Photon emission microscopy was done on the samples and the results showed multiple light emission sites (Fig. 8). Spectral emission analysis on two ICs showed two spectra from one of the failures...
EDFA Technical Articles (2022) 24 (3): 24–31.
Published: 01 August 2022
... the failed device is compared to a fresh one. (continued on page 30) ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 24 NO. 3 (a) (b) (c) (d) Fig. 5 SCM analysis, (a) schematic of the probe-sample system in the SCM multidimensional approach; (b) AFM force-curve as a function of time; (c) SCM phase mapping at VDC...
EDFA Technical Articles (2008) 10 (1): 18–22.
Published: 01 February 2008
... device can be caused to fail by an ESD event. Devices that withstand 4000 V are considered very robust. A common minimum expectation for ICs is a human body model damage threshold of more than 2200 V for any combination of two pins. Devices susceptible to damage by 1000 V or less require exceptional care...
EDFA Technical Articles (2012) 14 (1): 14–20.
Published: 01 February 2012
... value may automatically be protected against the possibility of tin metal vapor arc formation. The Paschen curve gives the experimentally determined breakdown voltage below which a sustained arc cannot form. For air, nitrogen, and other common gases, the Paschen curve minimum ranges from 200 to 300 V...
EDFA Technical Articles (2017) 19 (3): 12–20.
Published: 01 August 2017
.... The scan spans from the inner end of the JTE near the top metal contact to the outer end of the JTE near the isolation trench. (a) 585 V breakdown device. (b) 747 V breakdown device. (c) 2331 V breakdown device. The applied voltage at which the peak transfers from the isolation trench to the metal contact...
EDFA Technical Articles (2015) 17 (1): 4–10.
Published: 01 February 2015
... generated at 0 V, or the intersection of the IV curve and the current axis. The VOC is the voltage observed at 0 A, or Fig. 1 Typical IV curve (solid red line) under illumination illustrating the definition of short-circuit current, opencircuit voltage, and maximum power point. Note that positive current...
EDFA Technical Articles (2004) 6 (3): 13–18.
Published: 01 August 2004
... A current for a 50 m line will drop VDD by 0.5 V (50 m /square is approximately the sheet resistance of Cu interconnections). The die temperature of modern ICs is reported to be as high as 135 °C.3 Transient hot spots can occur for these die, making speed prediction difficult for CAD tools. Clock lines...
EDFA Technical Articles (2004) 6 (1): 13–21.
Published: 01 February 2004
... Designs, VLSI Tech. Symp. Digest, 1997, pp. 69-70. 4. A. Keshavarzi, S. Narenda, S. Borkar, C. Hawkins, K. Roy, and V. Dey: Technology Scaling Behavior of Optimum Reverse Body Bias for Leakage Power Reduction in CMOS IC s, Proc. ISLPED, 1999, pp. 252-54. 5. Y. Taur and T. Ning: Fundamentals of Modern...
EDFA Technical Articles (2015) 17 (2): 10–17.
Published: 01 May 2015
... The three analysis modes that are possible with TR-LADA. (a) Single image where the timing of the laser pulse is held constant relative to the start of the test loop. (b) Movie, or sequence of images, in which x, y, and time vary. (c) TR-LADA waveform where x and y are held constant on one particular LADA...
EDFA Technical Articles (2014) 16 (1): 4–16.
Published: 01 February 2014
... C with a biprism voltage of 120 V Fig. 6 (a) Mean inner potential maps of pFET devices with 220 nm gate width. (b) Potential map of pFET with 70 nm gate width Volume 16 No. 1 11 Dual-Lens Electron Holography Fig. 6(b), the upper curved portion of the p-n junction the edge of the silicon diffusion...
EDFA Technical Articles (2001) 3 (3): 15–18.
Published: 01 August 2001
... an electron beam bombards a sample, the primary electrons interact with the target atoms in a variety of ways to generate: (a) low energy secondary electrons with an energy in the range 0-50 eV, (b) Auger electrons and characteristic x-rays, (c) photons that give rise to cathodoluminescence , and (d...
EDFA Technical Articles (2000) 2 (4): 25–30.
Published: 01 November 2000
.... Initially, nodes A, B, and C were DC microprobed with a voltameter while the failing device was powered up and set in a static state. Valid voltage levels were found on all three nodes (A = 0 V, B = 5 V, C = 0 V). To determine if the emitting inverter was functional, voltage was forced at node B while...
EDFA Technical Articles (2022) 24 (2): 4–10.
Published: 01 May 2022
.... 8 Hotspot of the failed LED detected by thermal emission. Fig. 10 IV curve and thermal emission of a good reference LED. edfas.org ELECTRONIC DEVICE FAILURE ANALYSIS | VOLUME 24 NO. 2 8 (a) (b) (c) visible light. Energy dispersive x-ray spectroscopy (EDS) can obtain qualitative and semi-quantitative...