Search Results for 3D APT

This article provides an overview of atom probe tomography (APT) and its use in semiconductor FA and new product development. It discusses the basic components in an atom probe, the making of APT tips, and the general approach for data collection and reconstruction. It also includes a case study in which 3D atom probe techniques are used to map dopant profiles and identify defects in the source-drain region of SiGe FinFET transistors.

New materials integration and improved design can be promoted by using atom probe tomography (APT) as an analysis technique. This article provides an overview of APT principles and setups and provides diverse examples that focus on its use to characterize electronic devices.

This article discusses the basic procedures involved in atom probe tomography (APT) and demonstrates its use on complex material stacks. Although still a relatively new technique, APT has moved to the forefront of semiconductor failure analysis because it can provide 3D chemical composition of a wide range of materials on a near-atomic scale.

This article demonstrates the value of atomic force microscopes, particularly the different electrical modes, for characterizing complex microelectronic structures. It presents experimental results obtained from deep trench isolation (DTI) structures using SCM and SSRM analysis with emphasis on the voltage applied by the AFM. From these measurements, a failure analysis workflow is proposed that facilitates AFM voltage optimization to reveal the structure of cross-sectioned samples, make comparisons, and determine the underlying cause of failures.