Scanning TEM electron beam-induced current (STEM EBIC) imaging is a promising technique for providing high-resolution electronic and thermal contrast as a complement to TEM’s physical contrast. This article presents recent progress in using the focused ion beam (FIB) to prepare thin, electrically contacted cross-section samples for STEM EBIC imaging and in situ biasing. Techniques involving both standard Ga+ FIB and Xe+ plasma FIB (PFIB) are described.

Xenon plasma focused ion beam specimen preparation is ideal for preparing plan view TEM specimens due to its large-volume-milling capabilities. This article describes concentrated Ar ion beam milling using low energy as a post-pFIB final thinning step of plan view TEM specimens from a phase change memory device. Precise control of specimen thinning is achieved, which results in high-quality specimens with pristine surfaces and a large field of view for TEM characterization.