Transmission electron microscopy (TEM) plays an important role semiconductor process development, defect identification, yield improvement, and root-cause failure analysis. At the same time, however, certain artifacts of specimen preparation and imaging present barriers for linear scaling of TEM techniques. This article assesses these challenges and explains how electron tomography is being used to overcome them.

cross-sectioning, electron tomography, specimen thickness, transmission electron microscopy
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Copyright © ASM International® 2005
2005
ASM International
Topics
Specimen preparation Transmission electron microscopy Semiconductor wafer fabrication
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