Low Frequency Noise Spectroscopy: A Powerful Diagnostic Tool for Trap Identification in Active and Passive Components

Low-frequency noise spectroscopy is a promising characterization technique for nanoscale devices and failure analysis investigations. This article describes and shows how low-frequency noise spectroscopy can be applied to identify stable traps induced by proton irradiations on silicon passive devices. The work focuses on traps located in the depleted region of the semiconductor material of already studied nanoscale transistor technologies.