Full Chip Backside Delayering of 10 nm Node Integrated Circuits with Chemically Assisted Focused Ion Beam Deprocessing

Advanced 10 nm device delayering is a critical process for verifying and validating the circuit design layout and extracting the structures buried inside the chip. The work featured in this article takes advantage of chemically assisted focused ion beam processing with ultraviolet spectroscopy to destructively delayer integrated circuits starting from the shallow trench isolation layer, enabling high-resolution SEM imaging at each layer.