Scanning capacitance microscopy (SCM) has proven to be an effective tool for investigating doping-related failure mechanism in ICs. The examples in this article show how the author used SCM to solve various problems including premature breakdown due to pattern misalignment, threshold voltage variations caused by poly gate doping anomalies, and source-drain leakage due to channeling effects.

channeling, doping profile, patterning defects, scanning capacitance microscopy, source-drain leakage
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Copyright © ASM International® 2011
2011
ASM International
Topics
Semiconductor wafer fabrication
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