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ASM Handbook

Materials Characterization

Edited by
Ruth E. Whan
Ruth E. Whan
Sandia National Laboratories
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ASM International
Volume
10
ISBN electronic:
978-1-62708-178-8
Publication date:
1986
Book Chapter

Methods Based on Sputtering or Scattering Phenomena

By
James A. Borders
James A. Borders
Sandia National Laboratories
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Published:
1986

Abstract

Field ion microscopy (FIM) can be used to study the three-dimensional structure of materials, such as metals and semiconductors, because successive atom layers can be ionized and removed from the surface by field evaporation. The ions removed from the surface by field evaporation can be analyzed chemically by coupling to the microscope a time-of-flight mass spectrometer of single-particle sensitivity, known as the atom probe (AP). This article describes the principles, sample preparation, and quantitative analysis of FIM. It also provides information on the principles, instrument design and operation, mass spectra and their interpretation, and applications of AP microanalysis.

Abstract

Low-energy ion-scattering spectroscopy (LEISS) is used extensively to analyze solid surfaces. The LEISS process relies on binary elastic collisions between an incident ion beam and the atoms in a sample to obtain information on the surface atoms. The velocity of the scattered ions is used to determine the mass of the atoms that are struck. This article introduces LEISS and its principles. It describes the use of LEISS spectra in qualitative and quantitative analyses, and reviews the instrumentation and applications of LEISS.

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James A. Borders, 1986. "Methods Based on Sputtering or Scattering Phenomena", Materials Characterization, Ruth E. Whan

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