Skip to Main Content
ASM Handbook

Materials Characterization

Edited by
Ruth E. Whan
Ruth E. Whan
Sandia National Laboratories
Search for other works by this author on:
ASM International
Volume
10
ISBN electronic:
978-1-62708-178-8
Publication date:
1986
Book Chapter

Scanning Electron Microscopy

By
John D. Verhoeven
John D. Verhoeven
Department of Metallurgy, Iowa State University
Search for other works by this author on:
Published:
1986
Page range:
490 - 515

Abstract

Scanning electron microscopy (SEM) has shown various significant improvements since it first became available in 1965. These improvements include enhanced resolution, dependability, ease of operation, and reduction in size and cost. This article provides a detailed account of the instrumentation and principles of SEM, broadly explaining its capabilities in resolution and depth of field imaging. It describes three additional functions of SEM, including the use of channeling patterns to evaluate the crystallographic orientation of micron-sized regions; use of backscattered detectors to reveal grain boundaries on unetched samples and domain boundaries in ferromagnetic alloys; and the use of voltage contrast, electron beam-induced currents, and cathodoluminescence for the characterization and failure analysis of semiconductor devices. The article compares the features of SEM with that of scanning Auger microscopes, and lists the applications and limitations of SEM.

You do not currently have access to this content.
Don't already have an account? Register

John D. Verhoeven, 1986. "Scanning Electron Microscopy", Materials Characterization, Ruth E. Whan

Download citation file:


×
Close Modal
This Feature Is Available To Subscribers Only

Sign In or Create an Account

Close Modal
Close Modal