Skip to Main Content
ASM Handbook

Surface Engineering

Edited by
C.M. Cotell
C.M. Cotell
Search for other works by this author on:
J.A. Sprague
J.A. Sprague
Search for other works by this author on:
F.A. Smidt, Jr.
F.A. Smidt, Jr.
Search for other works by this author on:
ASM International
Volume
5
ISBN electronic:
978-1-62708-170-2
Publication date:
1994
Book Chapter

Chemical Vapor Deposition of Semiconductor Materials

By
Manijeh Razeghi
Manijeh Razeghi
Northwestern University
Search for other works by this author on:
Published:
1994
Page range:
517 - 531

Abstract

This article describes the vapor-phase growth techniques applied to the epitaxial deposition of semiconductor films and discusses the fundamental processes involved in metal-organic chemical vapor deposition (MOCVD). It reviews the thermodynamics that determine the driving force behind the overall growth process and the kinetics that define the rates at which the various processes occur. The article provides information on the reactor systems and hardware, MOCVD starting materials, engineering considerations that optimize growth, and the growth parameters for a variety of Group III-V, II-VI, and IV semiconductors.

You do not currently have access to this content.
Don't already have an account? Register

Manijeh Razeghi, 1994. "Chemical Vapor Deposition of Semiconductor Materials", Surface Engineering, C.M. Cotell, J.A. Sprague, F.A. Smidt, Jr.

Download citation file:


×
Close Modal
This Feature Is Available To Subscribers Only

Sign In or Create an Account

Close Modal
Close Modal