The creep behavior of a γ-TiAl based alloy at 1073 K was investigated, examining three different microstructures: equiaxed γ (Eγ), γ/γ fully lamellar (FLγ), and equiaxed γ with α2 phase on grain boundaries (Eγα2). The aim was to understand the influence of lamellar interfaces and grain boundary α2 phase on creep behavior. Initially, creep rates were consistent across all specimens upon loading. However, Eγ exhibited a gradual decrease in creep rate compared to Eγα2 and FLγ. Notably, the minimum creep rate of Eγ was one order of magnitude lower than that of Eγα2 and FLγ. Conversely, Eγα2 and FLγ displayed a slight acceleration and the longest rupture strain, albeit with the shortest rupture time compared to Eγ. Upon microstructural analysis of of the creep-test specimens, it was observed that numerous dynamic recrystallized grains (DXGs) and sub-grains formed along grain boundaries and interiors in Eγ, whereas they were limited to the region along grain boundaries in FLγ. In contrast, very few DXGs were formed in Eγα2. These findings indicate that γ/γ interfaces inhibit the extension of DXGs into grain interiors, suggesting that the grain boundary α2 phase effectively suppresses the formation of DXGs.

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